期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2013
卷号：4
期号：2
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：Floating Gate MOS (FGMOS) transistors can be very well implemented in lieu of conventional MOSFET for design of a low-voltage, low-power current mirror. Incredible features of flexibility, controllability and tunability of FGMOS yields better results with respect to power, supply voltage and output swing. This paper presents a new current mirror designed with FGMOS which exhibit high output impedance, higher current range, very low power dissipation and higher matching accuracy. It achieves current range of up to 1500 µA, high output impedance of 1.125 TΩ, bandwidth of 4.1 MHz and dissipates power as low as 10.56 µW. The proposed design has been simulated using Cadence Design Environment in 180 nm CMOS process technology with +1.0 Volt single power supply.
关键词：Floating Gate MOSFET; Current Mirror; Regulated Cascode; Low-Voltage & Low-Power
