期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2010
卷号：1
期号：3
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness, channel and Source/Drain doping and less sensitive to source/drain width and length, and work function variations. Statistical modelling has been performed for ft through design of experiment with respect to sensitive parameters. The model has been validated through a comparison between random set of experimental data simulations and predicted values obtained from the model.
关键词：ft ; FinFET; process variations; Statistical modelling; Design of Experiments
