期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2011
卷号：2
期号：3
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：The linearity and analog performance of a Silicon Double Gate Tunnel Field Effect Transistor (DG-TFET) is investigated and the impact of elevated temperature on the device performance degradation has been studied. The impact on the device performance due to the rise in temperature and a gate stack (GS) architecture has also been investigated for the case of Silicon DG-MOSFET and a comparison with DG- TFET is made. The parameters governing the analog performance and linearity have been studied, and high frequency simulations are carried out to determine the cut-off frequency of the device and its temperature dependence.
