期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2011
卷号：2
期号：3
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：The paper presents a simulation study of effect of interface fixed charges on the performance of the cylindrical nanowire MOSFET for different channel materials (Si, GaAs and Ge). The objective of the present work is to study the effect of hot carrier damage/stress induced damage/process damage/radiation damage induced fixed charges at the semiconductor-oxide interface of the cylindrical nanowire MOSFET. Also the circuit reliability issues of the device are discussed in terms of the performance degradation due to interface fixed charges. The performance has been compared for the three materials in terms of drain current driving capability, Ion/Ioff ratio, early voltage, transconductance, parasitic gate capacitance, intrinsic delay, current gain and power gain of the device.
