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  • 标题:Stand by Leakage Power Reduction in Nanoscale Static CMOS VLSI Multiplier Circuits Using Self Adjustable Voltage Level Circuit
  • 本地全文:下载
  • 作者:Deeprose Subedi ; Eugene John
  • 期刊名称:International Journal of VLSI Design & Communication Systems
  • 印刷版ISSN:0976-1527
  • 电子版ISSN:0976-1357
  • 出版年度:2012
  • 卷号:3
  • 期号:5
  • 出版社:Academy & Industry Research Collaboration Center (AIRCC)
  • 摘要:In this paper, we performed the comparative analysis of stand-by leakage (when the circuit is idle), delay and dynamic power (when the circuit switches) of the three different parallel digital multiplier circuits implemented with two adder modules and Self Adjustable Voltage level circuit (SVL). The adder modules chosen were 28 transistor-conventional CMOS adder and 10 transistor- Static Energy Recovery CMOS adder (SERF) circuits. The multiplier modules chosen were 4Bits Array, 4bits Carry Save and 4Bits Baugh Wooley multipliers. At first, the circuits were simulated with adder modules without applying the SVL circuit. And secondly, SVL circuit was incorporated in the adder modules for simulation. In all the multiplier architectures chosen, less standby leakage power was observed being consumed by the SERF adder based multipliers applied with SVL circuit. The stand-by leakage power dissipation is 1.16µwatts in Bits array multiplier with SERF Adder applied with SVL vs. 1.39µwatts in the same multiplier with CMOS 28T Adder applied with SVL circuit. It is 1.16µwatts in Carry Save multiplier with SERF Adder applied with SVL vs. 1.4µwatts in the same multiplier with CMOS 28T Adder applied with SVL circuit. It is 1.67µwatts in Baugh Wooley multiplier with SERF Adder applied with SVl circuit vs. 2.74µwatts in the same multiplier with CMOS 28T Adder applied with SVL circuit.
  • 关键词:10 Transistor SERF Adder; SVL Circuit; Stand-by Leakage Power; Dynamic Power; Delay; Low Power;Design; Sub-micron Regimes.
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