期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2012
卷号：3
期号：5
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：Resonant tunneling diodes (RTDs) have functional versatility and high speed switching capability. The integration of resonant tunneling diodes and MOS transistor makes threshold gates and logics. The design and fabrication of linear threshold gates will be presented based on a monostable bistable transition logic element. Each of its input terminals consist out of a resonant tunnelling diode merged with a transistor device. The circuit models of RTD and MOSFET are simulated in HSPICE. Two input XOR gate is designed and tested.
