期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2012
卷号：3
期号：3
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：This paper deals with the design and performance analysis of a ring oscillator using CMOS 45nm technology process in Cadence virtuoso environment. The design of optimal Analog and Mixed Signal (AMS) very large scale integrated circuits (VLSI) is a challenging task for the integrated circuit(IC) designer. A Ring Oscillator is an active device which is made up of odd number of NOT gates and whose output oscillates between two voltage levels representing high and low. There are a number of challenges ahead while designing the CMOS Ring Oscillator which are delay, noise and glitches. CMOS is the technology of choice for many applications, CMOS oscillators with low power, phase noise and timing jitter are highly desired. In this paper, we have designed a CMOS ring oscillator with nine stages. Previously, the researchers were unable to reduce the phase noise in ring oscillators substantially with nine stages. We have successfully reduced the phase noise to -6.4kdBc/Hz at 2GHz center frequency of oscillation.
关键词：Analog and mixed signal (AMS); VLSI circuit; CMOS Ring oscillator (RO); integrated circuit (IC); phase;noise; center frequency of oscillation
