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  • 标题:Design of Near-Threshold CMOS Logic Gates
  • 本地全文:下载
  • 作者:N. Geetha Rani ; N. Praveen Kumar ; B. Stephen Charles
  • 期刊名称:International Journal of VLSI Design & Communication Systems
  • 印刷版ISSN:0976-1527
  • 电子版ISSN:0976-1357
  • 出版年度:2012
  • 卷号:3
  • 期号:2
  • 出版社:Academy & Industry Research Collaboration Center (AIRCC)
  • 摘要:Numerous efforts have made to balance the tradeoff between power consumption, area and speed of a design. While studying the design at the two extreme ends of the design spectrum, namely the ultra-low power with acceptable performance at one end and high performance with power within limit at the other has not made. One solution to achieve the ultra-low power consumption is to operate the design in sub- threshold region. The use of sub-threshold circuit designing in fast and energy efficient circuits is always needed in electronics industry especially in DSP, image processing and arithmetic units in microprocessors, where the low power is the primary concern and the delay can be tolerated. We design a simple CMOS inverter in weak inversion region (sub-threshold) and compare the power consumption with strong inversion region using Cadence 0.18µm Technology.
  • 关键词:Ultra low power; Sub-Threshold Region; CMOS
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