期刊名称：International Journal of Computer Technology and Applications
电子版ISSN：2229-6093
出版年度：2011
卷号：2
期号：5
页码：1275-1282
出版社：Technopark Publications
摘要：This paper presents a CMOS four-transistor SRAM cell for very high density and low power embedded SRAM applications as well as for stand-alone SRAM applications. The new cell size is 35.45% smaller than a conventional six-transistor cell using same design rules. Also proposed cell uses two word-lines and one pair bit-line. Read operation perform from one side of cell, and write operation perform from another side of cell, and swing voltage reduced on word-lines thus power during read/write operation reduced. Cadence Virtuoso simulation in standard 45nm CMOS technology confirms all results obtained from this paper
关键词：SRAM; read operation; write operation; power consumption.
