期刊名称：Proceedings of the National Academy of Sciences
印刷版ISSN：0027-8424
电子版ISSN：1091-6490
出版年度：2013
卷号：110
期号：26
页码：10546-10551
DOI：10.1073/pnas.1308853110
语种：English
出版社：The National Academy of Sciences of the United States of America
摘要：Electronic states at domain walls in bilayer graphene are studied by analyzing their four- and two-band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking reversal, and by simultaneous reversal of both quantities. Boundary mode properties are related to topological transitions and gap closures, which occur in the bulk Hamiltonian parameter space. The important role played by intervalley coupling effects not directly captured by the continuum model is addressed using lattice calculations for specific domain wall structures.
