摘要：Crystallization kinetics has been studied in amorphous Se70Te30Sbx (0 X 10) by measuring the time dependence of electrical conductivity during the crystallization process. The samples have been annealed isothermally at various temperatures in the range of 70 -100°C.The experimental data has been fitted to the theory of surface induced crystallization process and various parameters have been calculated. The variation of these parameters with Sb concentration is found to be highly composition dependent.
