摘要：Cadmium Sulphide is an important semiconducting material belonging to group II-VI. This compound has been investigated since many years in crystal and thin film forms. In present investigations, Cadmium Sulphide is deposited in thin film form using thermal evaporation at pressure better than 10-5 torr. The structural and optical characterizations of CdS have been discussed in this paper for three different thicknesses. From the structural characterization (Using XRD technique), it was observed that CdS possesses cubic structure with grain size around 20 nm. The micro strain (å) and dislocation density (ñ) were also estimated in present case and found to be in the range 16.25x104 – 22.73 x104 lines-m2 and 19x10-5 – 33x10-5 lines/m2 respectively. The lattice parameter was found to be around 5.811? .From the optical characterization, the bandgap of CdS was evaluated and found to vary from 2.46eV to 2.40eV with thickness in the range 6k? - 10k?. In addition to this, the transmission properties were observed to become less effective as the thickness of films increases. The extinction coefficient was found to decrease with increase in thickness of the films..
