摘要：In this paper the temperature influence on the performance of the modulated doped field effect transistor is analyzed. MODFET LNA design at 5.8GHz centre frequency is analyzed, whose dielectric constant of the substrate is 2.2 and the maximum gain value obtained is 16.203 dB with minimum noise figure value obtained as 0.24. Noise resistance variation w.r.t temperature was also obtained. Different values of performance parameters were obtained for different device temperatures, which clearly justifies the effect of thermal noise on the performance of the design. Lines used in the design along with the components are properly placed in the layout obtained. This work has been carried out using ADS software and the results obtained are in greater coherence with theoretical facts.
