期刊名称：International Journal of Computer Science Issues
印刷版ISSN：1694-0784
电子版ISSN：1694-0814
出版年度：2011
卷号：8
期号：5
出版社：IJCSI Press
摘要：In view of difficulties of the planar MOSFET technology to get the acceptable gate control over the channel FinFET technology based on multiple gate devices is better technology option for further shrinking the size of the planar MOSFET [1]. For double gate SOI- MOSFET the gates control the channel created between source and drain terminal effectively. So the several short channel effects like DIBL, subthreshold swing, gate leakage current etc. without increasing the carrier concentration into the channel. This paper mainly deals with detail description about the DG MOSFET structure and its particular type named as FinFET technology and its fabrication mechanism is also described. Below the 50nm technology FinFET has better controlling over the several short channel effects. In section one the introduction is given, section two describe the Evaluation from previous technology, section three describe the DG MOSFET structure and its type, section four describe the FinFET technology, section five describe the fabrication mechanism of the FinFET technology and finally conclusions given in section six.
关键词：CMOS scaling; DG MOSFET; FinFET; Short Channel Effect; SOI Technology
