摘要：This paper describes about the implementation of Solid State Circuit Breaker in power system using MOSFET. The high power semiconductor switches can be used to separate the faulty portions from the rest of the power system in case of abnormal conditions. The Solid State Circuit Breaker is a topology made in the form of module, can protect power system and its components from faults. Existing mechanical circuit breakers are based on the principle of magnetically latching a pair of mechanical contacts shrouded by an arc chute for arc extinction. Very often unnecessary tripping results from a phenomenon known as, “rapid rise” which subsequently results in the demand for frequent maintenance. Due to the long turn-off delay of the present mechanical circuit breaker, significant voltage sag is experienced in the grid which affects the sensible loads. The distortions caused by the three phase short circuit can be reduced to 100 μs in the system with SSCB, in contrast to 100 ms achieved by the present technology and hence it improves the power quality. The SSCB uses high power anti parallel switches to carry bidirectional current. The load voltage is sensed and it is used to turn on and turn off the SSCB. The Eight bus system with SSCB is modeled and simulated using Matlab/Simulink. The hardware model is developed for implementation of SSCB using MOSFET and it is tested in the laboratory.
