期刊名称：International Journal of Electronics Communication and Computer Technology
印刷版ISSN：2249-7838
出版年度：2011
卷号：1
期号：2
页码：26
出版社：International Journal of Electronics Communication and Computer Technology
摘要：This paper explores suitable materials for tunnel FETs (TFETs) which have good switching characteristics. In all device simulations, total body of TFET is made up of group III-V and IV materials are simulated. Proposed InGaS b and InAlSb TFETs have high ION/IOFFratio and steep subthreshold swing. These TFETs are modeled and used for digital gate simulations. Performance is evaluated on the basis of average delay, dynamic and leakage powers. Silicon (Si) MOSFET whose structure is similar to TFET structure is simulated and modeled. MOSFET digital gates are simulated and their performance is compared with InGaSb and InAlSb TFET gates
关键词：Tunnel FET; band to band tunneling; I;ON;/I;OFF;ratio; subthreshold swing and circuit performance
