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  • 标题:ESD Protected Bandgap Reference Voltage Chip
  • 本地全文:下载
  • 作者:S. Rama Devi ; D.Ramadevi
  • 期刊名称:International Journal of Electronics Communication and Computer Technology
  • 印刷版ISSN:2249-7838
  • 出版年度:2012
  • 卷号:2
  • 期号:4
  • 页码:203
  • 出版社:International Journal of Electronics Communication and Computer Technology
  • 摘要:Bandgap Reference voltage chip is implemented in 0.25μm CMOS technology with ESD protection. This chip can be designed by using a layout tool micro wind 3.1.7 version. The chip circuit generates a reference voltage of 1.23 V. It can operate between 20oC & 70oC temperature. Band gap core produces a voltage that is insensitive to variation in temperature. It has a unique protection with respect to ESD and LATCHUP. The bandgap reference circuit is to design in CMOS process. This helps to avoid BICMOS process which is little bit complicated and much more expensive than CMOS process
  • 关键词:Bandgap Reference; CMOS; BICMOS ESD; ;LATCHUP
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