摘要：Surface InP quantum dots grown by gas source molecular beam epitaxy on In0.48Ga0.52P buffer layer lattice matched to GaAs substrate shows a broad-band near-infrared photoluminescence ranging from 750 to 865 nm dependent on their dimensions. A reversible luminescence intensity enhancement has been observed when the quantum dots were exposed to vapours of different chemical solvents with the highest sensitivity for alcohol (methanol and ethanol) vapours. The luminescent behaviour is dependent on the solvent type and concentration. The peak energy and band shape of the luminescence are not affected by the solvent vapour.
