期刊名称：International Journal of Advanced Research In Computer Science and Software Engineering
印刷版ISSN：2277-6451
电子版ISSN：2277-128X
出版年度：2012
卷号：2
期号：6
出版社：S.S. Mishra
摘要：This paper describe the developments in SOI MOSFET with single gate, double gate, triple gate as well as gate all around structures. The bulk Si MOSFET has been the main device forming the backbone of the development of ultra high density ICs. In order to reduce parasitic capacitances Silicon-on-insulator (SOI) technology used.. The double-gate (top and bottom gate) silicon-on-insulator (SOI) MOSFET and the gate-all-around (GAA) device are the most suitable device structures for suppressing short-channel effects such as drain-induced barrier lowering (DIBL) and sub threshold slope degradation. The nano MOSFETs are the requirement of nano electronics .The gate all around MOSFET used in silicon Nano wires.
