摘要：The ZnO nanostructures have been
synthesized and studied as the sensing element for the detection of H2S.
The ZnO nanostructures were synthesized by hydrothermal method followed by
sonication for different interval of time i.e.
30, 60, 90 and 120 min. By using screen printing method, thick films of
synthesized ZnO nanostructure were deposited on glass substrate. Gas sensing
properties of ZnO nanostructure thick films were studied for low concentration
H2S gas at room temperature. The effects of morphology of
synthesized ZnO nanostructure on gas sensing properties were studied and
discussed. ZnO nanostructure synthesized by this method can be used as a
promising material for semiconductor gas sensor to detect poisonous gas like H2S
at room temperature with high sensitivity and selectivity.
关键词：ZnO Nanostructure; Room Temperature Gas Sensor for H<sub>2</sub>S
