首页    期刊浏览 2024年05月07日 星期二
登录注册

文章基本信息

  • 标题:An Integrated ISFET pH Microsensor on a CMOS Standard Process
  • 本地全文:下载
  • 作者:Francisco López-Huerta ; Rosa María Woo-Garcia ; Miguel Lara-Castro
  • 期刊名称:Journal of Sensor Technology
  • 印刷版ISSN:2161-122X
  • 电子版ISSN:2161-1238
  • 出版年度:2013
  • 卷号:3
  • 期号:3
  • 页码:57-62
  • DOI:10.4236/jst.2013.33010
  • 出版社:Scientific Research Publishing
  • 摘要:We present the design and integration of a nine-pH microsensor array on a single silicon substrate with its own signal readout circuit, integrated in a 0.6-μm commercial standard complementary metal oxide semiconductor (CMOS) process. An ion sensitive field effect transistor (ISFET) has been used as pH microsensor and an instrumentation amplifier as the read-out circuit. The ISFET structure is conformed by the channel length and ratio of MOS transistor, gate extended and the selective membrane, for which silicon nitride (Si3N4) is employed as an ion selective element. The complete design includes shielding around the pH microsensor and the readout circuit to avoid leakage of current to the substrate. The readout circuit is composed by three operational amplifiers and resistances that form the instrumentation amplifier, with a ±2.5 V bias has a 50 dB gain, power supply rejection ratio (PSSR) of 120 dB and common mode rejection ratio (CMRR) of 127 dB. The complete system is integrated in a 1.12 mm2 silicon area; it presents a 59 mV/pH linearity, within a concentration range of 2 to 12 of pH level, making it a good alternative for biological or medical applications.
  • 关键词:CMOS; Instrumentation Amplifier; ISFET; pH
国家哲学社会科学文献中心版权所有