出版社：Society for Microwave Technique, Technologies and Systems, Serbia and Montenegro IEEE MTT-S Chapter
摘要：This paper describes silicon RFIC's designed for GSM900/DCS 1800 base station receivers. GSM standard and radio requirements are reviewed, and circuits that meet those requirements are discussed. A low-phase noise VCO, a high linearity low noise amplifier, a high linearity mixer, and a low -residual phase noise buffer amplifier, all fully integrated in 0.25um BiCMOS technology, are presented. Performance of these circuits demonstrated that it is feasible to use low cost silicon technology for base station receiver radios
关键词：Silicon RFIC's; BiCMOS technology; base ;station receivers; GSM specifications
