出版社：Society for Microwave Technique, Technologies and Systems, Serbia and Montenegro IEEE MTT-S Chapter
摘要：The applications of artificial neural networks (ANNs) in bias-dependent modeling of S-parameters of microwave FETs and HBTs are considered in this paper. Besides a simple model based on an ANN that models S-parameter's dependence on the bias conditions and frequency, a model based on an ANN with additional prior knowledge at its inputs (PKI ANN) is introduced as well. S-parameters of the device that belongs to the same class as the modeled device are used as the prior knowledge. Further, a model of S-parameters for a class of devices made in the same technology and differ in the gate widths' values is proposed. All of the proposed models are illustrated by the appropriate modeling examples
