出版社：Society for Microwave Technique, Technologies and Systems, Serbia and Montenegro IEEE MTT-S Chapter
摘要：A simple procedure for accurate prediction of noise parameters of microwave FETs versus temperature is proposed in this paper. The proposed modeling procedure presents a modification of noise wave transistor model with the aim to improve the model accuracy. For this purpose, frequencydependent error correction functions are determined and incorporated into the noise parameter expressions. The error correction functions calculated for one temperature are used for efficient transistor noise parameter modelling for various device ambient temperatures, as it is shown by an example of packaged HEMT noise modelling
