期刊名称：International Journal of Electronics and Computer Science Engineering
电子版ISSN：2277-1956
出版年度：2012
卷号：1
期号：2
页码：718-726
出版社：Buldanshahr : IJECSE
摘要：Sense amplifiers are one of the very important peripheral components of CMOS memories. In a Hybrid Sense amplifier both current and voltage sensing techniques are used which makes it a better selection than a conventional current or voltage sense amplifiers. The hybrid sense amplifier works in three phases-Offset cancellation (200ps), Access phase (500ps) and Evaluation phase. The offset cancellation is done simultaneously with word line decoding, so as to speed up the process. The sensing range of the hybrid sense amplifier is improved from 1.18mV to 92mV. Also hybrid sense amplifier consumes very low energy of about 6.84fj. This sense amplifier is analyzed with a column of 512 SRAM cells at 180nm technology node and compared to CMOS conventional voltage sense amplifier. The circuit consumes an average power of 1.57 μW with a negligible offset of 149.3μV
关键词：Voltage Sense Amplifier (VSA); Current Sense Amplifier (CSA); Pre-charge; Pre Sense Amplifier
