期刊名称：International Journal of Electronics and Computer Science Engineering
电子版ISSN：2277-1956
出版年度：2012
卷号：1
期号：3
页码：1454-1458
出版社：Buldanshahr : IJECSE
摘要：In this paper, a comparative study of different high-k dielectric materials based on tunneling current density has been deployed. The various types of high-k dielectric materials such as aluminium oxide, hafnium oxide, silicon nitride are compared using Schr.dinger equation. The analytical model of tunneling current density has been computed using WKB approximation method. The simulation results of various high-k dielectric materials have also been computed. Different high-k dielectric materials are also compared on the basis of barrier height and effective mass etc
关键词：Analytical Model; Silicon oxide; High-k dielectric; Tunneling current
