期刊名称：International Journal of Advanced Research In Computer Science and Software Engineering
印刷版ISSN：2277-6451
电子版ISSN：2277-128X
出版年度：2013
卷号：3
期号：8
出版社：S.S. Mishra
摘要：MOSFET is the basic component of VLSI and ULSI circuits. In fact, MOSFET finds application in the instrumentation part of any electronic system. Large packing density, low noise and low power requirement make MOS transistors superior to bipolar junction transistors. Unfortunately, MOS devices are susceptible to degradation in presence of ionizing radiation. Exposure to high radiation dose may lead to permanent failure of these devices. Conventional MOSFET can survive 3-10 krad (Si) of total dose without much parametric degradation. However, ionizing radiation dose in excess of 50 krad (Si) may turn out to be detrimental to proper functioning of the device. The space environment is hostile to most integrated electronic components such as those for navigation, communication, data processing function in satellites and various space missions. The radiations generally encountered in space are α-, β-, γ- , x-ray, energetic electrons, protons, neutrons and ions of various kinds are prevalent in space and have potential to cause various transient or fatal device damages. It is therefore necessary to study the performance of MOSFET in presence of nuclear radiation to devise ways and means for developing radiation hardened devices. Earlier the size of MOSFET was very large, but due the advancement in technology the size of MOSFET is reducing. The size of MOSFET is measured by its channel length. In deep sub micron technology, the channel length of MOSFET reduces from .35 micrometer to .25 micro meters. In this paper, a semiemperical analytical model of MOSFET is developed and implemented in MATLAB at deep sub micron technology. Various short channel effects are studied at deep submicron technology and various radiation effects on MOSFET are analyzed which degrades the electrical parameters of the MOSFET
