期刊名称：International Journal of Computer Technology and Applications
电子版ISSN：2229-6093
出版年度：2011
卷号：2
期号：2
页码：359-364
出版社：Technopark Publications
摘要：This paper outlines the reduction of Read Equivalent Stress (RES) during test of SRAM memories and demonstrates that the modified pre-charge activity reduces RES because of the predictable addressing sequence. We exploit this observation in order to show minimization of power dissipation during test by eliminating the unnecessary power consumption associated with RES .Read or write operations on a cell involve a stress on the other cells of the same word line is called Read Equivalent Stress. Read Equivalent Stress has the same effect than a read operation. We have calculated 99.8% reduction in RES with the modified pre-charge activity during test for different MARCH algorithms.
关键词：SRAM; Low Power; Test March; Pre-charge; RES; SoC; dRDF; Functional Mode; Test Mode; Resistive open defect; Addressing sequence
