标题：Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 <b><i>μ</i>m</b> Technology
摘要：The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.
