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  • 标题:Coarse-grained simulations of the gating current in the voltage-activated Kv1.2 channel
  • 本地全文:下载
  • 作者:Ilsoo Kim ; Arieh Warshel
  • 期刊名称:Proceedings of the National Academy of Sciences
  • 印刷版ISSN:0027-8424
  • 电子版ISSN:1091-6490
  • 出版年度:2014
  • 卷号:111
  • 期号:6
  • 页码:2128-2133
  • DOI:10.1073/pnas.1324014111
  • 语种:English
  • 出版社:The National Academy of Sciences of the United States of America
  • 摘要:Quantitative structure-based modeling of voltage activation of ion channels is very challenging. For example, it is very hard to reach converging results, by microscopic simulations while macroscopic treatments involve major uncertainties regarding key features. The current work overcomes some of the above challenges by using our recently developed coarse-grained (CG) model in simulating the activation of the Kv1.2 channel. The CG model has allowed us to explore problems that cannot be fully addressed at present by microscopic simulations, while providing insights on some features that are not usually considered in continuum models, including the distribution of the electrolytes between the membrane and the electrodes during the activation process and thus the physical nature of the gating current. Here, we demonstrate that the CG model yields realistic gating charges and free energy landscapes that allow us to simulate the fluctuating gating current in the activation processes. Our ability to simulate the time dependence of the fast gating current allows us to reproduce the observed trend and provides a clear description of its relationship to the landscape involved in the activation process.
  • 关键词:coarse-grained model ; potassium ion channel ; voltage sensing
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