摘要：Compared
with the conventional strained quantum well, the InGaAs/GaAsP strain
compensated quantum well (SCQW) has better optical properties, as the well
layer and the barrier layer lattice mismatch with each other which results in the introduction of
stress. In this paper, we adopted the Kohn-Luttinger Hamiltonian, conducted
some theoretical calculations using the transfer matrix method, and finally
verified the following change trend of the InGaAs quantum well following the In-group
through experiments: the growth of the low In-group can improve the epitaxial
flatness of the active area; the growth of the high In-group can
increase the wavelength as well as the strain. In this paper, we adopted the
AlGaAs barrier material instead of the GaAsP, made an analysis on the level
changes of the compensation quantum well, and successfully fostered the strain
compensated quantum well structure using the metal-organic chemical vapor
deposition (MOCVD) system which had better optical properties compared with the
strained quantum wells.
