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  • 标题:The Study of Relaxation Time in Test of 940 nm Semiconductor Laser
  • 本地全文:下载
  • 作者:Jiachun Li ; Jianjun Li ; Tao Liu
  • 期刊名称:Journal of Computer and Communications
  • 印刷版ISSN:2327-5219
  • 电子版ISSN:2327-5227
  • 出版年度:2013
  • 卷号:1
  • 期号:7
  • 页码:46-49
  • DOI:10.4236/jcc.2013.17011
  • 出版社:Scientific Research Publishing
  • 摘要:Conventional test of the peak wavelength of a laser used to be applied immediately after a device is injected current. However, the results can not be considered as an accurate description to temperature characteristic. This passage puts forward a concept of relaxation time in wavelength texts, mainly based on the experiment of 940 nm strain quantum well laser, confirming that under constant current, wavelength will get through a process of rising, and then, reach the limit. This process brings the effect on spectral characteristics of a device which cannot be ignored and the accumulated heat in relaxation time will gradually impact the emission wavelength of the laser, even crest split to form bimodal phenomenon.
  • 关键词:Semiconductor Laser; Test; Temperature Characteristics; Relaxation Time
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