摘要：Gunn oscillations in a GaN based
planar nano-device have been studied by ensemble Monte
Carlo (EMC) method. Simulation results show that when the
channel length of the device reduces to 450 nm, THz oscillations (about 0.3 THz) can be obtained. Also the phase of the oscillations can be
controlled by the initial conditions that excite the Gunn domains. Moreover, through adjusting the phase difference between the
oscillations in a double-channels device, which attained by parallel connecting
two single-channel devices, the frequency of the device
shifts from 0.3 THz to 0.6 THz. This phenomenon remains in devices with shorter
channel-length, unless the channel-length is too short to support Gunn
oscillations. The possible underlying mechanisms are also discussed.
关键词：THz Oscillation; Gunn; Monte Carlo; GaN; Planar Nanodevice
