摘要：The photodetector based on double barrier AlAs/GaAs/AlAs heterostructures and a layer self-assembled InAs quantum dots and In0.15Ga0.85As quantum well (QW) hybrid structure is demonstrated. The detection sensitivity and detection ability under weak illuminations have been proved. The dark current of the device can remain at 0.1 pA at 100 K, even lower to A, at bias of −1.35 V. Its current responsivity can reach about A/W when 1 pw 633 nm light power and −4 V bias are added. Meanwhile a peculiar amplitude quantum oscillation characteristic is observed in testing. A simple model is used to qualitatively describe. The results demonstrate that the InAs monolayer can effectively absorb photons and the double barrier hybrid structure with quantum dots in well can be used for low-light-level detection.
