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  • 标题:Proposed Model for Degradation of Gunn Diodes as Observed from Study of the I-V Characteristics
  • 本地全文:下载
  • 作者:R. Gulati ; I. Chandra ; B. L. Sharma
  • 期刊名称:Defence Science Journal
  • 印刷版ISSN:0976-464X
  • 出版年度:2014
  • 卷号:33
  • 期号:2
  • 页码:113-117
  • DOI:10.14429/dsj.33.6159
  • 语种:English
  • 出版社:Defence Scientific Information & Documentation Centre
  • 摘要:The effect of heat treatment on the functional Gunn diodes has been investigated in the temperature range of 200-300°C. The influence of electricfield during heat treatment has also been studied. The simple variations in I-V characteristics with annealing time have been utilized to interpret the contact behaviour.
  • 关键词:Degradation;Gunn Diodes
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