出版社：Defence Scientific Information & Documentation Centre
摘要：Studies on MeV heavy ion beam-induced epitaxial crystallisation of a buried silicon nitride layer are reported. Transmission electron micrographs and selected area diffraction patterns have been used to study the recrystallisation of an ion beam-synthesised layer. Complete recrystallisation of the silicon nitride layer having good quality interfaces with the top- and the substrate-Si has been obsorved. Recrystallisation is achieved at significantly lower temperatures of 100 and 200OC for oxygen and silver ions, respectively. The fact that recrystallisation is achieved at the lowest temperature for the oxygen ions is discussed on the basis of energy loss processes. Defence Science Journal, 2009, 59(4), pp.351-355 , DOI:http://dx.doi.org/10.14429/dsj.59.1533
关键词：Ion beam-induced recrystallisation;silicon nitride;high-resolution transmission electron microscopy;selected area diffraction pattern;swift ion beam;SHI;swift heavy ion
