出版社：Defence Scientific Information & Documentation Centre
摘要：The complex perovskite compound CaCu3Ti4O12 (CCTO) is of considerable interest becauseof its anomalously large dielectric response. In this study, the dielectric properties of sol-gel-derived thin films of CCTO prepared at various annealing temperatures; 7000 °C, 7200 °C, and7500 °C have been reported. The frequency and temperature-dependent dielectric properties ofall these samples have been studied in metal-insulator-metal configuration using an impedanceanalyser. Dielectric measurements at room temperature show that the dielectric constant increaseswith the increase in annealing temperature from 700 °C–7500 °C. High dielectric constant (varyingfrom 600 to 3000 with the change in annealing temperature) has been observed at room temperatureat 100 kHz. The dielectric measurements below room temperature do not show any evidence ofstructural relaxation in CCTO except a little additional tilting of the TiO6 octahedra with decreasingtemperature. The dielectric response of Ba-doped CCTO films has also been reported.
