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  • 标题:Ion Implantation into GaAs
  • 本地全文:下载
  • 作者:B. L. Sharma
  • 期刊名称:Defence Science Journal
  • 印刷版ISSN:0976-464X
  • 出版年度:2013
  • 卷号:39
  • 期号:4
  • 页码:353-365
  • DOI:10.14429/dsj.39.4785
  • 语种:English
  • 出版社:Defence Scientific Information & Documentation Centre
  • 摘要:Ion implantation is the most widely used process in semiconductor industry for selectively introducing controlled amount of impurities inGaAs. Various implantation effects which influence the performance and reproducibility of direct implantation GaAs integrated circuits and methods used to overcome/minimize them are discussed in this review. Abrief account of the implantation work being carried out in our laboratory towards fabrication of GaAs MESFETs and improving their performance and uniformity is also included here.
  • 关键词:GaAs integrated circuits
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