出版社：Defence Scientific Information & Documentation Centre
摘要：Ion implantation is the most widely used process in semiconductor industry for selectively introducing controlled amount of impurities inGaAs. Various implantation effects which influence the performance and reproducibility of direct implantation GaAs integrated circuits and methods used to overcome/minimize them are discussed in this review. Abrief account of the implantation work being carried out in our laboratory towards fabrication of GaAs MESFETs and improving their performance and uniformity is also included here.
