文章基本信息
- 标题：Germanium Alloy Junction NPN Transistors Part-I
- 本地全文：下载
- 作者：Balepur S. Murthy ; D. K. Garg
- 期刊名称：Defence Science Journal
- 印刷版ISSN：0976-464X
- 出版年度：2014
- 卷号：17
- 期号：3
- 页码：151-156
- DOI：10.14429/dsj.17.7385
- 语种：English
- 出版社：Defence Scientific Information & Documentation Centre
- 摘要：Alloy junction NPN transistors have been fabricated in the Laboratory starting from p-type single crystal of germanium. The design aspects of these transistors and fabrication details are given.
- 关键词：Germanium;Alloy Junction
