1.The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

作　　者：Đorić-Veljković Snežana M. ;Manić Ivica Đ. ;Davidović Vojkan S. 等

出　　处：Nuclear Technology and Radiation Protection. 2013 ;28(4):406-414.doi:10.2298/NTRP1304406D

出版社：VINČA Institute of Nuclear Sciences

文章 ID：90459023

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2.Annealing of radiation-induced defects in burn-in stressed power VDMOSFETs

作　　者：Đorić-Veljković Snežana M. ;Manić Ivica Đ. ;Davidović Vojkan S. 等

出　　处：Nuclear Technology and Radiation Protection. 2011 ;26(1):18-24.doi:10.2298/NTRP1101018D

出版社：VINČA Institute of Nuclear Sciences

文章 ID：79822984

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3.Ferdinandov-Vagalinski Lyudmil: Burnished pottery from the first century to the beginning of the seventh century ad from the region South of the Lower Danube (Bulgaria), Sofia, 144 strana teksta, 49 t

作　　者：Golubović Snežana

出　　处：Starinar. 2005 ;(55):208-211.doi:10.2298/STA0555208G

出版社：Arheološki institut

文章 ID：79807343

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4.Effects of pulsed negative bias temperature stressing in p-channel power VDMOSFETs

作　　者：Manić, Ivica ;Danković, Danijel ;Davidović, Vojkan 等

出　　处：Facta universitatis - series: Electronics and Energetics. 2016 ;29(1):49-60.doi:10.2298/FUEE1601049M

出版社：University of Niš

文章 ID：155279880

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5.NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs

作　　者：Davidović, Vojkan ;Danković, Danijel ;Golubović, Snežana 等

出　　处：Facta universitatis - series: Electronics and Energetics. 2018 ;31(3):367-388.doi:10.2298/FUEE1803367D

出版社：University of Niš

文章 ID：219420191

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